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BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS

Designed for Complementary Use with the BD250 Series 125 W at 25C Case Temperature 25 A Continuous Collector Current 40 A Peak Collector Current Customer-Specified Selections Available
C B
SOT-93 PACKAGE (TOP VIEW) 1
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BD249 Collector-emitter voltage (RBE = 100 ) BD249A BD249B BD249C BD249 Collector-emitter voltage (IC = 30 mA) BD249A BD249B BD249C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot 1/2LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 25 40 5 125 3 90 -65 to +150 -65 to +150 250 V A A A W W mJ C C C V V UNIT
This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 1 W/C. Derate linearly to 150C free air temperature at the rate of 24 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS
electrical characteristics at 25C case temperature
PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD249 V(BR)CEO IC = 30 mA (see Note 5) VCE = 55 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 70 V VCE = 90 V VCE = 115 V ICEO IEBO VCE = 30 V VCE = 60 V VEB = VCE = VCE = VCE = IB = IB = VCE = VCE = 5V 4V 4V 4V 1.5 A 5A 4V 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 1.5 A IC = 15 A IC = 25 A IC = 15 A IC = 25 A IC = 15 A IC = 25 A IC = IC = 1A 1A (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 25 3 (see Notes 5 and 6) 25 10 5 1.8 4 2 4 V V IB = 0 BD249A BD249B BD249C BD249 BD249A BD249B BD249C BD249/249A BD249B/249C MIN 45 60 80 100 0.7 0.7 0.7 0.7 1 1 1 mA mA mA V TYP MAX UNIT
hFE
V CE(sat) VBE hfe
VCE = 10 V VCE = 10 V
|hfe |
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1 42 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = 5 A VBE(off) = -5 V IB(on) = 0.5 A RL = 5
MIN IB(off) = -0.5 A tp = 20 s, dc 2%
TYP 0.3 0.9
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
1000 VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2%
TCS635AD
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 10
TCS635AB
hFE - DC Current Gain
100
1*0
10
0*1 IC = IC = IC = IC = 0*1 1*0 10 25 A 20 A 15 A 10 A 100
1 0*1
1*0
10
100
0*01 0*001
IC = 300 mA IC = 1 A IC = 3 A 0*01
IC - Collector Current - A
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT
2*0 VCE = 4 V TC = 25C
TCS635AC
1*8 VBE - Base-Emitter Voltage - V
1*6
1*4
1*2
1*0
0*8
0*6 0*1
1*0
10
100
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
100
SAS635AB
IC - Collector Current - A
10
tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation
1*0
0*1
BD249 BD249A BD249B BD249C 10 100 1000
0*01 1*0
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
140 Ptot - Maximum Power Dissipation - W
TIS635AA
120
100
80
60
40
20
0 0 25 50 75 100 125 150 TC - Case Temperature - C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS
MECHANICAL DATA SOT-93 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 1,37 1,17
3,95 4,15
16,2 MAX. 12,2 MAX.
31,0 TYP.
18,0 TYP.
1 1,30 1,10
2
3 0,78 0,50 11,1 10,8 2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5

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